J. H. Oh, H. W. Lee, S. Mannsfeld, R. M. Stoltenberg, E. Jung, Y. W. Jin, J. M. Kim, J.-B. Yoo, Z. Bao, “Solution-Processed, High-Performance n-Channel Organic Microwire Transistors”, Proc. Natl. Acad. Sci. USA 2009, 106, 6065–6070.

 [Featured from the cover] [Highlighted in the following media]

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(Link : http://www.technologyreview.com/news/412574/faster-flexible-electronics/)

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(Link : http://news.stanford.edu/news/2009/march18/fast-transistors-flexible-electronics-031809.html)

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(Link : http://www.eetimes.com/electronics-news/4081840/Samsung-looks-to-print-flexible-electronics)

"Scientists Fabricate Organic Transistor with Improved Performance" (PhysOrg)
(Link : http://phys.org/news159789536.html)

The development of solution-processable, high-performance n-channel organic semiconductors is crucial to realizing low-cost, all-organic complementary circuits. Single-crystalline organic semiconductor nano/microwires (NWs/MWs) have great potential as active materials in solution-formed high-performance transistors. However, the technology to integrate these elements into functional networks with controlled alignment and density lags far behind their inorganic counterparts. Here, we report a solution-processing approach to achieve high-performance air-stable n-channel organic transistors (the field-effect mobility (μ) up to 0.24 cm2/Vs for MW networks) comprising high mobility, solution-synthesized single-crystalline organic semiconducting MWs (μ as high as 1.4 cm2/Vs for individual MWs) and a filtration-and-transfer (FAT) alignment method. The FAT method enables facile control over both alignment and density of MWs. Our approach presents a route toward solution-processed, high-performance organic transistors and could be used for directed assembly of various functional organic and inorganic NWs/MWs.

* Full paper about it → http://www.pnas.org/content/106/15/6065