Y. H. Kim, E. K. Lee, J. H. Oh,* "Flexible Low-Power Operative Organic Source-Gated Transistors", Adv. Funct. Mater. 2019, 1900650.

[Selected as a Back Cover Paper]

A simple structure for lowering driving voltages in organic electronics was engineered via source‐gated transistor (SGT) structures, in which SGTs are fabricated by evaporating asymmetric metals with different work functions for the source and drain electrodes. Substantially low driving voltages induced by the effect of the Schottky barrier for the saturation regime are achieved.